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Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltage controlled bipolar device.
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It consists of four alternating layers p n p n that are controlled by a metal oxide semiconductor mos gate structure without regenerative clarification needed action.
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Cm a wiley interscience publication includes bibliographical references and index.
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To make use of the advantages of both power.
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The insulated gate bipolar transistor igbt is a minority carrier device with high input impedance and large bipolar current carrying capability.
Covers igbt operation device and process design power modules and new igbt structures.
Appendix 5 1 solution of eq.
Covers igbt operation device and process design power.
Insulated gate bipolar transistor igbt theory and design ieee press series on microelectronic systems vinod kumar khanna a comprehensive and state of the art coverage of the design and fabrication of igbt all in one resourceexplains the fundamentals of mos and bipolar physics covers igbt operation device and process design power modules.
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Isbn 0 471 23845 7 cloth 1.
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Tk971 96 b55k49 2003 621 3815 282 dc21 2003043251 printed in the united states of america 10.
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An insulated gate bipolar transistor igbt is a three terminal power semiconductor device primarily used as an electronic switch which as it was developed came to combine high efficiency and fast switching.
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Theory and design covers basic theory and design aspects of igbts including the selection of silicon achieving targeted specifications through device and process design and device packaging.
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Igbt process design and fabrication technology.
